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HFP640 - N-Channel Enhancement Mode Field Effect Transistor

General Description

These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Key Features

  • s 1- G 2-D 3-S.
  • 18A,200V,RDS(on).

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Datasheet Details

Part number HFP640
Manufacturer Shantou Huashan
File Size 352.58 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFP640 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor █ General Description These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 1- G 2-D 3-S • 18A,200V,RDS(on) <0.