Datasheet Summary
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel Enhancement Mode Field Effect Transistor
- General Description
These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Tele,Industrial and Consumer Environment
TO-220
- Features
1- G 2-D 3-S
- 18A,200V,RDS(on) <0.18Ω@VGS =10 V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Equivalent Type:IRF640
- Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg-
- Storage Temperature ------------------------------------------------------ -55~150℃
Tj
- - Operating Junction...
