| Part Number | HFP640 |
|---|---|
| Manufacturer | SemiHow |
| Overview | HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology . Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 ȍ (Typ.) @VGS=10V 100% Avalanche Tes. |
HFP640 Datasheet
The HFP640 is a 200V N-Channel MOSFET.
| Part Number | HFP640 |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | Shantou Huashan |
| Overview |
These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,I.
1- G 2-D 3-S
* 18A,200V,RDS(on) <0.18Ω@VGS =10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:IRF640 █ Maximum Ratings（Ta=25℃ unless otherwise specified） Tstg * *Storage Temperature * * * * * * * * * * * * * * * * * * * * * * * * * * * -55~150℃ Tj * *Opera. |