Datasheet Summary
HFP640A_HFS640A
Oct 2016
HFP640A / HFS640A
200V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS pliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 200 18 0.14 22
HFP640A TO-220
HFS640A TO-220F
Symbol
Unit V A ȍ...
