HFP640 - 200V N-Channel MOSFET

Product Overview

SemiHow

Part number	HFP640
Manufacturer	SemiHow
File Size	190.60 KB
Description	200V N-Channel MOSFET
Datasheet	HFP640 Datasheet
Additional preview pages of the HFP640 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.145 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

📁 Similar Datasheet

HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP630 - N-Channel Enhancement Mode Field Effect Transistor (Shantou Huashan)
HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP50N06 - N-Channel MOSFET (Shantou Huashan)

Other Datasheets by SemiHow

Published: Jun 7, 2015 |