Datasheet Summary
July 2005
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 23
1.Gate 2. Drain 3....
