HFP640G - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Dr.

HFP640G n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP640G
Manufacturer	SemiHow
File Size	181.06 KB
Description	N-Channel MOSFET
Datasheet	HFP640G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFP640	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan
HFP60N06	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP630	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan
HFP13N10	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N50	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number	Description
HFP640	200V N-Channel MOSFET
HFP640A	N-Channel MOSFET
HFP644	250V N-Channel MOSFET
HFP630	200V N-Channel MOSFET
HFP630A	200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.