Datasheet Summary
Feb 2015
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 18 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....
