HFP8N65U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP8N65U HFP8N65U 650V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.