HFS10N80 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFS10N80
Manufacturer	SemiHow
File Size	211.34 KB
Description	N-Channel MOSFET
Datasheet	HFS10N80 Datasheet
Additional preview pages of the HFS10N80 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.92 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

📁 Similar Datasheet

Other Datasheets by SemiHow

Published: Mar 26, 2016 |