HFU5N65U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD5N65U_HFU5N65U HFD5N65U / HFU5N65U 650V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.3 ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 2.3 ȍ ID = 3.6 A D-PAK I-PAK 2 1 3 HFD5N65U 1 2 3 HFU5N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.