HFW10N60S Datasheet N-channel MOSFET

Manufacturer: SemiHow

Overview: HFW10N60S May 2010 HFW10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 9.

Datasheet Details

Part number	HFW10N60S
Manufacturer	SemiHow
File Size	183.45 KB
Description	N-Channel MOSFET
Datasheet	HFW10N60S-SemiHow.pdf

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

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