HFW10N60U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFW10N60U_HFI10N60U HFW10N60U / HFI10N60U 600V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A D2-PAK I2-PAK HFW10N60U HFI10N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.