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HFW50N06 Datasheet Preview

HFW50N06 Datasheet

60V N-Channel MOSFET

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HFW50N06 pdf
Nov 2009
HFW50N06 / HFI50N06
60V N-Channel MOSFET
BVDSS = 60 V
RDS(on) = 18 mΩ
ID = 50 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 40 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V
‰ 100% Avalanche Tested
D2-PAK I2-PAK
HFW50N06 HFI50N06
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Continuous (TC = 25)
Continuous (TC = 100)
Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
60
50
35.4
200
ρ25
490
50
12
7.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.75
120
0.8
-55 to +175
300
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.24
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡



SemiHow
SemiHow

HFW50N06 Datasheet Preview

HFW50N06 Datasheet

60V N-Channel MOSFET

No Preview Available !

HFW50N06 pdf
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 25 A
2.0 -- 4.0
-- 0.018 0.022
V
Ω
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250
60 -- -- V
ΔBVDSS Breakdown Voltage Temperature
/ΔTJ Coefficient
ID = 250 , Referenced to25
--
0.06
--
V/
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150
-- -- 1
-- -- 10
IGSSF Gate-Body Leakage Current,
Forward
VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -25 V, VDS = 0 V
-- -- -100
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1600 2100
-- 600 780
-- 90 120
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 30 V, ID = 50 A,
RG = 25 Ω
(Note 4,5)
VDS = 48 V, ID = 50 A,
VGS = 10 V
(Note 4,5)
-- 15 40
-- 105 220
-- 60 130
-- 65 140
-- 40 52 nC
-- 10 -- nC
-- 17 -- nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 50 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 50 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
-- 50
A
-- 200
-- 1.5 V
52 --
75 -- μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=230μH, IAS=50A, VDD=25V, RG=25:, Starting TJ =25qC
3. ISD50A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡


Part Number HFW50N06
Description 60V N-Channel MOSFET
Maker SemiHow
Total Page 8 Pages
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