HFW50N06 Datasheet 60V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFW50N06_HFI50N06 Nov 2009 HFW50N06 / HFI50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ. ) @VGS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.