HRP80N06K Datasheet 60V N-Channel Trench MOSFET

Manufacturer: SemiHow

Datasheet Details

HRP80N06K HRP80N06K 60V N-Channel Trench MOSFET.

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 90 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 114 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.