Part SBP13007-H2
Description High Voltage Fast-Switching NPN Power Transistor
Category Transistor
Manufacturer SemiWell Semiconductor
Size 765.39 KB
SemiWell Semiconductor

SBP13007-H2 Overview

Description

This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply. TO-220 1 2 3 Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.

Key Features

  • Very High Switching Speed (Typical 60ns@5.0A)
  • Minimum Lot-to-Lot hFE Variation
  • Low VCE(sat) (Typical 390mV@5.0A/1.0A)
  • Wide Reverse Bias S.O.A Symbol ○ ○ c