2N3499 Datasheet | Semicoa Semiconductor

Features : - General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases. Generic Part Number: 2N3499 REF: MIL-PRF-19500/366 - - - TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25o C Derate above 25o C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Rating 100 100 6.0 500 5.0 28.8 Unit V V V m A m W m W/o C o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3499 Electrical Characteristics TC = 25o C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 m A Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current VCB = 50 V Emitter-Base Cutoff Current VEB = 4 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 100 100 6.0 ----- Max ------50 25 Unit V V V n A n A ON Characteristics Forward Current Transfer Ratio IC = 100 µA, VCE = 10 V (pulsed) IC = 1.0 m A, VCE = 10 V (pulsed) IC = 10 m A, VCE = 10 V (pulsed) IC = 150 m A, VCE = 10 V (pulsed) IC = 300 m A, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 10 m A, IB = 1.0 m A IC = 300 m A, IB = 300 m A Collector-Emitter Saturation Voltage IC = 10 m A, IB = 1.0 m A IC = 300 m A, IB = 30 m A Symbol h FE1 h FE2 h FE3 h FE4 h FE6 VBE(sat)1 VBE(sat)3 VCE(sat)1 VCE(sat)3 Min 35 50 75 100 20 --------- Max ------300 --0.8 1.4 0.2...