2N6193 Datasheet | Semicoa Semiconductor

Features : - - - - Silicon transistor for use in switching applications. Housed in a TO-39 case. Also available in chip form using the 9700 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/561 which Semicoa meets in all cases. Generic Part Number: 2N6193 REF: MIL-PRF-19500/561 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Base Current, Continuous Power Disipation TA = 25o C ambient Derate above 25o C Power Disipation TA = 25o C ambient o Derate above 25 C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IB PT PT TJ TSTG Rating 100 100 6.0 5.0 1.0 1.0 5.71 10.0 57.1 -55 to +200 -55 to +200 Unit V V V A A W m W/o C Watt o m W/ C o C C o Data Sheet No. 2N6193 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Emitter Breakdown Voltage IC = 50 m A, pulsed Collector-Base Cutoff Current VCB = 100 V Base-Emitter Cutoff Current VEB = 6 V VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 100 V VCE = 90 V, VBE = 1.5 V VCE = 90 V, VBE = 1.5 V, TA = +150o C Symbol V(BR)CEO ICBO IEBO IEBO2 ICEO ICEX1 ICEX2 Min 100 ------------- Max --10 100 1.0 100 10 1.0 Unit V µA µA m A µA µA m A ON Characteristics Forward Current Transfer Ratio IC = 0.5 A, VCE = 2.0 V, pulsed IC = 2.0 A, VCE = 2.0 V, pulsed IC = 5.0 A, VCE = 2.0 V, pulsed IC = 2.0 A, VCE = 2.0 V pulsed, TC = -55o C Base-Emitter Saturation Voltage IC = 2.0 A, IB = 0.2 A, pulsed IC = 5.0 A, IB = 0.5 A, pulsed Collector-Emitter Saturation Voltage IC = 2.0 A, IB = 0.2 A, pulsed IC = 5.0 A, IB = 0.5 A, pulsed Symbol h FE1 h FE2 h FE3 h FE4 VBE(sat)1 VBE(sat)2 VCE(sat)1 VCE(sat)2 Min 60 60 40 12 --------- Max --240 ----1.2 1.8 0.7 1.2 Unit --------V dc V dc V dc V...