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SEMiX603GB12E4Ip - IGBT

Key Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • Press-fit pins as auxiliary contacts.
  • Thermally optimized ceramic.
  • Current sensing shunt resistor.
  • UL recognized, file no. E63532 Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX603GB12E4Ip SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4Ip Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no.