SEMiX603GB12E4SiCp Description
SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp.
SEMiX603GB12E4SiCp Key Features
- With Silicon Carbide (SiC) Schottky diodes
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature
- Press-fit pins as auxiliary contacts
- Thermally optimized ceramic
- UL recognized, file no. E63532