Download SEMiX603GB12E4Ip Datasheet PDF
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SEMiX603GB12E4Ip Description

SEMiX603GB12E4Ip SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4Ip.

SEMiX603GB12E4Ip Key Features

  • Homogeneous Si
  • Trench = Trenchgate technology
  • VCE(sat) with positive temperature
  • High short circuit capability
  • Press-fit pins as auxiliary contacts
  • Thermally optimized ceramic
  • Current sensing shunt resistor
  • UL recognized, file no. E63532