SEMiX603GB12E4SiCp
Features
- With Silicon Carbide (Si C) Schottky diodes
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- Press-fit pins as auxiliary contacts
- Thermally optimized ceramic
- UL recognized, file no. E63532
Typical Applications-
- AC inverter drives
- UPS
- Renewable energy systems
Remarks
- Product reliability results are valid for Tj=150°C
- Visol between temperature sensor and power section is only 2500V
- RG off must be at least 16Ω in case VCC ≥ 900V
- For storage and case temperature with TIM see document “TP(- ) SEMi X 3p”
GB © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 2x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj tp = 8.3 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol module without TIM AC sinus 50Hz, t = 1...
