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SEMiX603GB12E4SiCp - IGBT

Key Features

  • With Silicon Carbide (SiC) Schottky diodes.
  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • Press-fit pins as auxiliary contacts.
  • Thermally optimized ceramic.
  • UL recognized, file no. E63532 Typical.

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SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp Features • With Silicon Carbide (SiC) Schottky diodes • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no.