Datasheet4U Logo Datasheet4U.com

SKM200GBD123D - IGBT

Features

  • MOS input (voltage controlled).
  • N channel, Homogeneous Si.
  • Low inductance case.
  • Very low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology.
  • Large clearance (13 mm) and creepage distances (20 mm). Typical.

📥 Download Datasheet

Datasheet preview – SKM200GBD123D

Datasheet Details

Part number SKM200GBD123D
Manufacturer Semikron
File Size 58.89 KB
Description IGBT
Datasheet download datasheet SKM200GBD123D Datasheet
Additional preview pages of the SKM200GBD123D datasheet.

📁 Similar Datasheet

Other Datasheets by Semikron

Full PDF Text Transcription

Click to expand full text
Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes IF= – IC IFM= – ICM Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms Values 1200 1200 200 / 150 400 / 300 ± 20 1250 – 40 . . .+150 (125) 2 500 7) Class F 755/150/56 Inverse D.
Published: |