SKM200GBD123D1S Datasheet | Semikron Danfoss

Features - MOS input (voltage controlled) - N channel, Homogeneous Si - Low inductance case - Very low tail current with low temperature dependence - High short circuit capability, self limiting to 6 - Icnom - Latch-up free - Fast & soft inverse CAL diodes8) - Isolated copper baseplate using DCB Direct Copper Bonding Technology - Large clearance (13 mm) and creepage distances (20 mm). Typical Applications: - Switching (not for linear use) - Resonant inverters 1) Tcase = 25 °C, unless otherwise specified 2) IF = - IC, VR = 600 V, - di F/dt = 1500 A/µs, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGoff = 5,6 Ω 6) Series diodes have the data of the inverse diodes of SKM 300 GB 123 D 8) CAL = Controlled Axial Lifetime Technology. 9) → B6-156 for protection only Cases and mech. data → B6-156 Diagrams → B6-150...153 (IGBT) and B6-172 and B6-173 (D3, D4) B 6 - 155 SKM 200 GBD 123 D1S SEMITRANS 3 Case D...