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SKM200GBD123D - IGBT

Key Features

  • MOS input (voltage controlled).
  • N channel, Homogeneous Si.
  • Low inductance case.
  • Very low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology.
  • Large clearance (13 mm) and creepage distances (20 mm). Typical.

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Full PDF Text Transcription for SKM200GBD123D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SKM200GBD123D. For precise diagrams, tables, and layout, please refer to the original PDF.

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IG...

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limate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes IF= – IC IFM= – ICM Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms Values 1200 1200 200 / 150 400 / 300 ± 20 1250 – 40 . . .+150 (125) 2 500 7) Class F 755/150/56 Inverse D.