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SKiM609GAL12E4 - IGBT

Key Features

  • IGBT 4 Trench Gate Technology.
  • Solderless sinter technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology forthermal contacts and electricalcontacts.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Tj = 175 °C IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj M.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKiM609GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 1200 748 608 600 1800 -20 ... 20 10 -40 ... 175 139 110 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 ... 175 Ts = 25 °C Ts = 70 °C 1397 1107 1350 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 4050 6480 -40 ... 175 700 -40 ...