SKiM609GAL12E4 Semikron Danfoss Datasheet

SKiM609GAL12E4 Key Features

• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
• Pressure contact technology forthermal contacts and electricalcontacts
• High short circuit capability, self limiting to 6 x IC
• Integrated temperature sensor