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SMC8810 - N-Channel Enhancement Mode MOSFET

General Description

20V N-Channel Enhancement Mode MOSFET

The SMC8810 is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

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Datasheet Details

Part number SMC8810
Manufacturer Semtron
File Size 451.73 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SMC8810 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode MOSFET SMC8810 ■DESCRIPTION 20V N-Channel Enhancement Mode MOSFET ■FEATURE The SMC8810 is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in small outline surface mount package. It is ESD protected. SMC8810W-TRG ROHS Compliant This is Halogen Free  20V/7.0A, RDS(ON) =11.5mΩ(typ.)@VGS =4.5V  20V/7.0A, RDS(ON) =12.0mΩ(typ.)@VGS =4.0V  20V/6.5A, RDS(ON) =12.5mΩ(typ.)@VGS =3.2V  20V/6.5A, RDS(ON) =14mΩ (typ.) @VGS =2.