Datasheet4U Logo Datasheet4U.com

3DD10 - NPN Silicon Low Frequency High Power Transistor

Datasheet Summary

Features

  • 1. Using triple-diffusion process. Excellent capacity in anti-burnout. Excellent second breakdown capacity. 2. Good temperature stability. Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4. Quality Class: JP, JT, JCT, GS, G, G+.

📥 Download Datasheet

Datasheet preview – 3DD10

Datasheet Details

Part number 3DD10
Manufacturer Shaanxi Qunli Electric
File Size 32.87 KB
Description NPN Silicon Low Frequency High Power Transistor
Datasheet download datasheet 3DD10 Datasheet
Additional preview pages of the 3DD10 datasheet.

📁 Similar Datasheet

  • 3DD100A - NPN Transistor (INCHANGE)
  • 3DD100B - NPN Transistor (INCHANGE)
  • 3DD100C - NPN Transistor (INCHANGE)
  • 3DD100D - NPN Transistor (INCHANGE)
  • 3DD100E - NPN Transistor (INCHANGE)
  • 3DD101A - Power Transistor (SJ)
  • 3DD101A - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 3DD101B - Power Transistor (SJ)
  • 3DD101B - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 3DD101C - Power Transistor (SJ)
Other Datasheets by Shaanxi Qunli Electric
  • 3DD100 - NPN Silicon Low Frequency High Power Transistor
  • 3DD101 - NPN Silicon Low Frequency High Power Transistor
  • 3DD102 - NPN Silicon Low Frequency High Power Transistor
  • 3DD11 - NPN Silicon Low Frequency High Power Transistor
  • 3DD57 - NPN Silicon Low Frequency High Power Transistor
  • 3DD60 - NPN Silicon Low Frequency High Power Transistor

Full PDF Text Transcription

Click to expand full text
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Specifications Parameter name Collector-Emitter Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Max. Collector Current Max.
Published: |