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Shaanxi Qunli Electric

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3DD10 Datasheet

NPN Silicon Low Frequency High Power Transistor

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Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD10, 3DD11
NPN Silicon Low Frequency High Power Transistor
Features:
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity.
2. Good temperature stability.Excellent thermal fatigue capability.
2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611
3. Use for Low-speed switch,low frequency power amplify,power adjustment.
4. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
Parameter name
Symbols Unit
Collector-Emitter Voltage VCEO V
Collector-Emitter
Breakdown Voltage
V(BR)CEO V
Emitter-Base Voltage
Max. Collector Current
VEBO
ICM
V
A
Max. Collector Dissipation
Junction Temperature
Storage Temperature
PCM
Tjm
Tstg
W
°C
°C
Collector-Emitter Leakage
ICEO mA
Current
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
DC Current Gain
hFE
E-Base Breakdown Voltage V(BR)EBO V
(Ta = 25°C )
Specifications
3DD10
3DD11
A BCD E FGH I
50 100 150 200 250 300 400 500 600
50 100 150 200 250 300 400 500 600
3DD10: IC=5mA
3DD11: IC=5mA
5
A~F20, G~I10
200 (Tc75°C)
5
A~F30, G~I15
300 (Tc75°C)
175
-55~+175
5.0 (A:VCE=30V;B:VCE=50V;
C~I:VCE=100V)
1.8(A~F: IC=10A, IB=1.0A)
2.0(A~F: IC=15A, IB=1.5A)
2.0 (G~I: IC=5.0A, IB=1.0A)
2.0 (G~I: IC=7.5A, IB=1.5A)
Max.:120
Max.:120
Min.:15(A~F: VCE=5V, IC=10A)
Min.: 7 (G~I:VCE=10V, IC=5.0A)
5 (IE=15mA)
Min.:15 (A~F: VCE=5V, IC=15A)
Min.: 7 (G~I:VCE=10V, IC=7.5A)
5 (IE=15mA)
hFE Colored:
Color
hFE
Brown
7~15
Red
15~25
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
sxqlljd@hotmail.com 4


Part Number 3DD10
Description NPN Silicon Low Frequency High Power Transistor
Maker Shaanxi Qunli Electric
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