logo

LH51BV1000J Datasheet, Sharp Electrionic Components

LH51BV1000J Datasheet, Sharp Electrionic Components

LH51BV1000J

datasheet Download (Size : 77.98KB)

LH51BV1000J Datasheet

LH51BV1000J ram equivalent, cmos 1m (128k x 8) static ram.

LH51BV1000J

datasheet Download (Size : 77.98KB)

LH51BV1000J Datasheet

Features and benefits


* Access time: 70 ns (MAX.)
* Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.)
* Data Retention: 1.0 µA (MAX.).

Description

The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology. A B C D E F CMOS 1M (128K × 8) Static Ram PIN CONNECTIONS 1 A2 I/O1 GND I/O4 I/O7 A10 .

Image gallery

LH51BV1000J Page 1 LH51BV1000J Page 2 LH51BV1000J Page 3

TAGS

LH51BV1000J
CMOS
128K
Static
Ram
Sharp Electrionic Components

Manufacturer


Sharp Electrionic Components

Related datasheet

LH5116

LH5116H

LH5116NA-10

LH5116S

LH51256

LH51256L

LH5160HN-10L

LH5164A

LH5164A-10LF

LH5164AH

LH5164ASH

LH5164AV

LH5164AVH

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts