HYB511000BJ-60 Datasheet - Siemens

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HYB511000BJ-60 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 33 01.95 HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 5.

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Datasheet Details

Part number:

HYB511000BJ-60

Manufacturer:

Siemens

File Size:

193.00 KB

Description:

1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

HYB511000BJ-60 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup applications. Pin Definitions and Functions Pin No. A0-A9 RAS DI

HYB511000BJ-60 Distributors

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HYB511000BJ-60 1-Bit Dynamic RAM Low Power 1-Bit Dynamic RAM Siemens

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