HYM72V1005GU-50 module equivalent, 3.3v 1m x 64-bit edo-dram module 3.3v 1m x 72-bit edo-dram module.
RAS hold time CAS hold time CAS to RAS precharge time Transition time (rise and fall) Refresh period tRC tRP tRAS tCAS tASR tRAH tASC tCAH tRCD tRAD tRSH tCSH tCRP tT tR.
1 bank 1M x 64, 1M x 72 organisation Optimized for byte-write non-parity or ECC applications Extended Data Out (EDO) Per.
1M x 64 DRAM module (access time 50 ns) 1M x 64 DRAM module (access time 60 ns) 1M x 72 DRAM module (access time 50 ns) 1M x 72 DRAM module (access time 60 ns)
Pin Names A0-A9 DQ0 - DQ63 CB0-CB7 RAS0, RAS2 CAS0 - CAS7 WE0, WE2 OE0, OE2 Vcc Vss SCL .
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