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Siemens Electronic Components Datasheet

BAL99 Datasheet

Silicon Switching Diode (For high-speed switching)

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Silicon Switching Diode
q For high-speed switching
BAL 99
Type
BAL 99
Marking
JFs
Ordering Code
(tape and reel)
Q62702-A687
Pin Configuration
Package1)
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 54 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
70 V
70
250 mA
4.5 A
370 mW
150 ˚C
– 65 … + 150
Rth JA
Rth JS
330
260
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91



Siemens Electronic Components Datasheet

BAL99 Datasheet

Silicon Switching Diode (For high-speed switching)

No Preview Available !

BAL 99
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
Reverse current
VR = 70 V
VR = 25 V, TA = 150 ˚C
VR = 70 V, TA = 150 ˚C
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100
measured at IR = 1 mA
Test circuit for reverse recovery time
Symbol
Values
Unit
min. typ. max.
V(BR) 70 –
VF
––
––
––
––
IR
––
––
––
–V
715
855
1
1.25
2.5
30
50
mV
mV
V
V
µA
CD – – 1.5 pF
trr – – 6 ns
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50
Oscillograph: R = 50
tr = 0.35 ns
C 1 pF
Semiconductor Group
2


Part Number BAL99
Description Silicon Switching Diode (For high-speed switching)
Maker Siemens Semiconductor Group
Total Page 4 Pages
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