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NXP Semiconductors Electronic Components Datasheet

BAL99 Datasheet

High-speed diode

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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAL99
High-speed diode
Product data sheet
Supersedes data of 1999 May 26
2003 Dec 12


NXP Semiconductors Electronic Components Datasheet

BAL99 Datasheet

High-speed diode

No Preview Available !

NXP Semiconductors
High-speed diode
Product data sheet
BAL99
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 70 V
Repetitive peak reverse voltage: max. 70 V
Repetitive peak forward current: max. 500 mA.
PINNING
PIN
1
2
3
DESCRIPTION
not connected
cathode
anode
APPLICATIONS
High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAL99 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the small SOT23
plastic SMD package.
handbook, halfpa2ge
1
2
3
1
n.c.
3
MAM231
Marking code:
JFp = made in Hong Kong;
JFt = made in Malaysia;
JFW = made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BAL99
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
tp = 1 ms
tp = 1 s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
70 V
70 V
215 mA
500 mA
4A
1A
0.5 A
250 mW
65 +150 °C
150 °C
2003 Dec 12
2


Part Number BAL99
Description High-speed diode
Maker NXP
Total Page 9 Pages
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