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Siemens Electronic Components Datasheet

BAT63 Datasheet

Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

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Silicon Schottky Diode
q Low barrier diode for mixer and detectors up to
GHz frequencies
BAT 63
Type
BAT 63
Ordering Code
(tape and reel)
Q62702-A1004
Pin Configuration
1234
A1 C2 A2 C1
Marking Package
63 SOT-143
Maximum Ratings
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Thermal Resistance
Junction-ambient1)
Symbol
VR
IF
Tj
Tstg
Values
3
100
150
– 55 … + 150
Rth JA
450
Unit
V
mA
°C
°C
K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
10.94



Siemens Electronic Components Datasheet

BAT63 Datasheet

Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

No Preview Available !

BAT 63
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Reverse current
VR = 3 V
Forward voltage
IF = 1 mA
Diode capacitance
VR = 0.2 V, f = 1 MHz
Case capacitance
Differential resistance
V = 0, f = 10 kHz
Series inductance
IR
VF
CT
CC
R0
LS
min.
Value
typ. max.
Unit
nA
– 10
mV
190 300
0.65
0.85
pF
0.1 –
pF
30 –
k
nH
2–
Semiconductor Group
2


Part Number BAT63
Description Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Maker Siemens Semiconductor Group
Total Page 3 Pages
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