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Siemens Electronic Components Datasheet

BAT68-04W Datasheet

Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)

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Silicon Schottky Diodes
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
BAT 68-04W
BAT68-05W
BAT68-06W
BAT 68W
Type
BAT 68-04W
BAT 68-05W
BAT 68-06W
BAT 68W
Marking Ordering Code
84s Q62702-
85s Q62702-
86s Q62702-
83s Q62702-
Pin Configuration
Package
1 = A1 2 = K2 3 = K1/A2 SOT-323
1 = A1 2 = A2 3 = K1/K2 SOT-323
1 = K1 2 = K2 3 = A1/A2 SOT-323
1 = A n.c.
3 = K SOT-323
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Total power dissipation, BAT68W TS=97°C
Ptot
Total power dissipation, BAW68-04...06W TS=92°C Ptot
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg
Thermal Resistance
Junction - ambient, BAT68W
Junction - ambient, BAT68-04W...06W
Junctui - soldering point, BAT68W
Junction - soldering point, BAT68-04W...06W
RthJA
RthJA
RthJS
RthJS
Values Unit
8V
130 mA
150 mW
150
150 °C
- 65 ... + 150
- 65 ... + 150
435
550
355
390
K/W
Semiconductor Group
1
Dec-20-1996



Siemens Electronic Components Datasheet

BAT68-04W Datasheet

Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)

No Preview Available !

BAT 68W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Reverse current
VR = 1 V, TA = 25 °C
VR = 1 V, TA = 60 °C
Forward voltage
IF = 1 mA
IF = 10 mA
Diode capacitance
VR = 1 V, f = 1 MHz
Differential forward resistance
IF = 5 mA
V(BR)
IR
VF
CT
RF
8
-
-
-
340
-
-
-
-
-
318
390
-
-
max.
-
0.1
1.2
340
500
1
10
Unit
V
µA
mV
pF
Forward current IF = f (TA*;TS)
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm *): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68W
BAT 68-04W, -05W, -06W
200
mA
IF 160
140
120 TS
100 TA
80
60
40
20
0
0 20 40 60 80 100 120 °C 150
TA,TS
200
mA
IF 160
140
120
100 TA TS
80
60
40
20
0
0 20 40 60 80 100 120 °C 150
TA,TS
Semiconductor Group
2
Dec-20-1996


Part Number BAT68-04W
Description Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)
Maker Siemens Semiconductor Group
Total Page 4 Pages
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