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Siemens Electronic Components Datasheet

BFR106 Datasheet

NPN Silicon RF Transistor

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NPN Silicon RF Transistor
• For low noise, high-gain amplifiers
• For linear broadband amplifiers
• Special application: antenna amplifiers
• Complementary type: BFR 194 (PNP)
BFR 106
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 106 R7s
Q62702-F1219
1=B 2=E 3=C 4=E
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 73 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
20
3
100
12
700
150
- 65 ... + 150
- 65 ... + 150
110
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996



Siemens Electronic Components Datasheet

BFR106 Datasheet

NPN Silicon RF Transistor

No Preview Available !

BFR 106
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
V(BR)CEO
15
ICES
-
ICBO
-
IEBO
-
hFE
40
-
-
-
-
100
max.
-
100
100
10
220
Unit
V
µA
nA
µA
-
Semiconductor Group
2
Dec-11-1996


Part Number BFR106
Description NPN Silicon RF Transistor
Maker Siemens Semiconductor Group
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BFR106 Datasheet PDF






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