BP104S phototransistor equivalent, silicon phototransistor.
q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering q Suitable for SMT Ap.
from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering q Suitable.
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