* q Especially suitable for applications from 350 nm to 1100 nm q BPX 65: high photosensitivity q BPX 66: low reverse current (typ. 150 pA) q Hermetically sealed metal package (TO-18), suitable up to 125 oC1) Applications q Fast optical sensor of high modulation bandwidth Gehäuse Package 18 A3 DIN 418
BPX65
Siemens Semiconductor Group
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Silizium-pin-fotodiode silicon pin photodiode.
BPX 65 BPX 66 Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwis.
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