BSS135
SIPMOS® Small-Signal Transistor
BSS 135 q q q q q q q
VDS 600 V ID 0.080 A RDS(on) 60 Ω
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
Type
Ordering Code
Tape and Reel Information
Pin Configuration Marking 1 G 2 D 3 S SS135
Package TO-92
BSS 135 Q67000-S237 E6325: 2000 pcs/carton; Ammopack Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 42 ˚C Pulsed drain current, Max. power dissipation,
Symbol
Values 600 600 ± 14 ± 20 0.080 0.24 1.0
- 55 … + 150 ≤ 125 E 55/150/56
Unit V
VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg Rth JA
- -
A W ˚C K/W
- TA = 25 ˚C TA = 25 ˚C
Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
BSS 135
Electrical Characteristics at Tj = 25 ˚C, unless otherwise...
