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BSS135 Datasheet

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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SIPMOS® Small-Signal Transistor
q VDS 600 V
q ID
0.080 A
q RDS(on) 60
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in VGS(th)
BSS 135
1 23
Type
Ordering
Code
Tape and Reel
Information
BSS 135 Q67000-S237 E6325: 2000 pcs/carton;
Ammopack
Pin Configuration Marking
123
G D S SS135
Package
TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 42 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
Values
600
600
± 14
± 20
0.080
0.24
1.0
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
125
E
55/150/56
K/W
Semiconductor Group
1
04.97



Siemens Electronic Components Datasheet

BSS135 Datasheet

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

No Preview Available !

BSS 135
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain-source breakdown voltage
VGS = 3 V, ID = 0.25 mA
Gate threshold voltage
VDS = 3 V, ID = 1 mA
Drain-source cutoff current
VDS = 600 V, VGS = 3 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-resistance
VGS = 0 V, ID = 0.01 A
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
Dynamic Characteristics
Forward transconductance
VDS 2 × ID × R ,DS(on)max ID = 0.01 A
Input capacitance
VGS = 3 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 3 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 3 V, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VDD = 30 V, VGS = 3 V ... + 5 V, RGS = 50 ,
ID = 0.2 A
Turn-off time toff, (toff = td(off) + tf)
VDD = 30 V, VGS = 3 V ... + 5 V, RGS = 50 ,
ID = 0.2 A
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
600 –
1.8 1.5
––
––
– 10
– 40
0.01
0.04
110
8
3
4
10
15
20
0.7
100
200
100
60
150
12
5
6
15
20
30
V
nA
µA
nA
S
pF
ns
Semiconductor Group
2


Part Number BSS135
Description SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Maker Siemens Semiconductor Group
Total Page 6 Pages
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