IL208A Datasheet | Siemens Semiconductor Group

FEATURES - High Current Transfer Ratio, IF=10 m A, VCE=5 V IL205A, 40- 80% IL206A, 63- 125% IL207A, 100- 200% IL208A, 160- 320% - High BVCEO, 70 V - Isolation Test Voltage, 2500 VACRMS - Industry Standard SOIC-8 Surface Mountable Package - Standard Lead Spacing, .05" - Available in Tape and Reel Option- Suffix “T” (Conforms to EIA Standard RS481A) - patible with Dual Wave, Fapor Phase and IR Reflow Soldering - Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL205A/206A/207A/208A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL205/ 6/7/8 e in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin pared to the industry standard 30 volts. Maximum Ratings Emitter Peak Reverse Voltage 6.0 V Continuous Forward Current 60 m A Power Dissipation at 25°C 90 m W Derate Linearly from 25°C 1.2 m W/°C Detector Collector-Emitter Breakdown Voltage 70 V Emitter-Collector Breakdown Voltage 7 V Collector-Base Breakdown Voltage 70 V Power Dissipation 150 m W Derate Linearly from 25°C 2.0 m W/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector) 240 m W Derate Linearly from 25°C 3.3 m W/°C Storage Temperature...