Q62702-A826 Datasheet | Siemens Semiconductor Group

Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz Hi Rel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band (GHz) Marking Ordering Code (tape and reel) 32 Q62702-A826 Pin Configuration Package1) Cerec-X BAT 32 … 18 (X, Ku) Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 6.5 50 150 - 55 … + 150 - 55 … + 150 Unit V m A ˚C 1) For detailed information see chapter Package Outlines. BAT 32 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 1 m A Forward voltage IF = 1 m A IF = 10 m A Diode capacitance VR = 0.15 V, f = 1 MHz Differential resistance VF = 0, f = 10 k Hz Symbol min. V(BR) VF - - CT Ro - - 0.2 0.6 0.20 15 - - 0.24 - p F kΩ 6.5 Values typ. - max. - V...