• Part: Q62702-A829
  • Description: Silicon RF Switching Diode
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 28.91 KB
Download Q62702-A829 Datasheet PDF
Siemens Semiconductor Group
Q62702-A829
Q62702-A829 is Silicon RF Switching Diode manufactured by Siemens Semiconductor Group.
Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q62702-A829 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operation temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR IF Top Tstg Values 35 100 - 55 … + 150 Unit V m A - 55 … + 125 ˚C K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group BA 582 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 100 m A Reverse current VR = 20 V Diode capacitance f = 1 MHz VR = 1 V VR = 3 V Forward resistance f = 100 MHz IF = 3 m A IF = 10 m A Reverse resistance VR = 1 V, f = 100 MHz Series inductance Symbol min. VF IR CT - 0.6 rf - - 1/gp LS - - 0.45 0.38 100 2.8 0.7 0.5 - - kΩ n H 0.92 0.85 1.4 1.1 Ω - - Values typ. - - max. 1 20 V n A p F Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor...