| Part number | Q62702-A826 |
|---|---|
| Datasheet | Q62702-A826_SiemensSemiconductorGroup.pdf |
| File Size | 31.49 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Schottky Diode |
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Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! BAT 32 at TA = 25 ˚C, unless otherwise specified.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A829 | Silicon RF Switching Diode |
| Q62702-A858 | Silicon PIN Diode |
| Q62702-A859 | Silicon PIN Diode |
| Q62702-A879 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A0042 | Silicon Crossover Ring Quad Schottky Diode |
| Q62702-A0043 | Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A0062 | Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
| Q62702-A0960 | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
