Q62702-A879 Datasheet | Siemens Semiconductor Group

BAT 64 Silicon Schottky Diodes Preliminary data - For low-loss, fast-recovery, meter protection, bias isolation and clamping applications - Integrated diffused guard ring - Low forward voltage Pin Configuration BAT 64-04 BAT64-05 BAT64-06 ESD: Electro Static Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration BAT 64 BAT 64-04 BAT 64-05 BAT 64-06 63s 64s 65s 66s Q62702-A879 Q62702-A961 Q62702-A962 Q62702-A963 1=A 1=A 1=A 1=C 2=C 2=A 2=C 3=C 3 = C/A 3 = C/C 3 = A/A Package SOT-23 SOT-23 SOT-23 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t ≤ 10ms) Total Power dissipation Symbol Values 40 250 120 800 m W 250 150 - 55 ... + 150 ≤ 495 ≤ 355 °C Unit V m A VR IF IFSM Ptot Tj Tstg Rth JA Rth JS Average forward current (50/60Hz, sinus) IFAV TS = 61 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit 320 385 440 570 2 200 350 430 520 750 µA VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C Forward voltage VF m V V IF = 1 m A IF = 10 m A IF = 30 m A IF = 100 m A AC Characteristics Diode...