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Q62702-C2301 Datasheet - Siemens Semiconductor Group

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Q62702-C2301 Features

* q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type BC 856 AW BC 856 BW BC 857 AW BC 857 BW BC 857 CW BC 858 AW BC 858 BW BC 858 CW BC

Q62702-C2301 General Description

Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth J.

Q62702-C2301 Datasheet (273.24 KB)

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Datasheet Details

Part number:

Q62702-C2301

Manufacturer:

Siemens Semiconductor Group

File Size:

273.24 KB

Description:

Pnp silicon af transistors (for af input stages and driver applications high current gain low collector-emitter saturation voltage).

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Q62702-C2301 PNP Silicon Transistors For input stages and driver applications High current gain Low collector-emitter saturation voltage Siemens Semiconductor Group

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