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SVF2N60RM Datasheet 600V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVF2N60RM datasheet PDF. This datasheet also includes the SVF2N60RD variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVF2N60RD-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF2N60RM
Manufacturer Silan Microelectronics
File Size 366.96 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF2N60RM Datasheet

General Description

SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

Overview

Silan Microelectronics SVF2N60RD/M/MJ_Datasheet 2A, 600V N-CHANNEL MOSFET.

Key Features

  •  2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L.