SVF2N60RMJ

The SVF2N60RMJ is 600V N-CHANNEL MOSFET designed by Silan Microelectronics.

Product Overview

Silan Microelectronics

Datasheet Details

Part number	SVF2N60RMJ, SVF2N60RD
Manufacturer	Silan Microelectronics
File Size	366.96 KB
Description	600V N-CHANNEL MOSFET
Datasheet	SVF2N60RD-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVF2N60RMJ, SVF2N60RD. Please refer to the document for exact specifications by model.
Additional preview pages of the SVF2N60RMJ datasheet.

Product details

Description

SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology.

Features

 2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L.

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Other Datasheets by Silan Microelectronics

SVF2N60RM - 600V N-CHANNEL MOSFET
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Published: Apr 3, 2019 |