SVF2N60RMJ, SVF2N60RD Datasheet - Silan Microelectronics

SVF2N60RMJ 600V N-CHANNEL MOSFET

SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching .

SVF2N60RMJ Features

*  2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L NOMENCLATURE Silan VDMOS Code of F-Cell process SVF XNXXRX Package information. Example: FJH: TO-220FJH; F:

SVF2N60RD-SilanMicroelectronics.pdf