SVF6N60FQ
Description
SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 6A,600V,RDS(on(typ.)=1.35@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE
