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SVF6N60FQ - 600V N-CHANNEL MOSFET

Download the SVF6N60FQ datasheet PDF. This datasheet also covers the SVF6N60DTR variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 6A,600V,RDS(on(typ. )=1.35@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF6N60DTR-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF6N60FQ
Manufacturer Silan Microelectronics
File Size 587.16 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF6N60FQ Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF6N60F MOSFET
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SVF6N60MJ MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF6N60F/D/FQ_Datasheet 6A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A,600V,RDS(on(typ.)=1.35@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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