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SVF6N60MJ Datasheet MOSFET

Manufacturer: Silan Microelectronics

Datasheet Details

Part number SVF6N60MJ
Manufacturer Silan Microelectronics
File Size 541.77 KB
Description MOSFET
Download SVF6N60MJ Download (PDF)

General Description

SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

Overview

SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL.

Key Features

  • ∗ 6A,600V,RDS(on(typ)=1.35Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.