SVF6N60FQ Datasheet | Silan Microelectronics

SVF6N60F/D/FQ_Datasheet 6A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 6A,600V,RDS(on(typ.)=1.35@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF6N60F SVF6N60DTR SVF6N60FQ Package TO-220F-3L TO-252-2L TO-220FQ-3L Marking SVF6N60F SVF6N60D SVF6N60FQ Hazardous substance control Pb free Halogen free Pb free Packing Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:2.5 Page 1 of 10 SVF6N60F/D/FQ_Datasheet...