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SVF6N60FQ - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF6N60FQ, a member of the SVF6N60DTR 600V N-CHANNEL MOSFET family.

Description

SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 6A,600V,RDS(on(typ. )=1.35@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF6N60FQ
Manufacturer Silan Microelectronics
File Size 587.16 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF6N60FQ Datasheet
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SVF6N60F/D/FQ_Datasheet 6A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A,600V,RDS(on(typ.)=1.35@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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