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SVF6N60F - MOSFET

This page provides the datasheet information for the SVF6N60F, a member of the SVF6N60MJ MOSFET family.

Description

SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 6A,600V,RDS(on(typ)=1.35Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVF6N60F
Manufacturer Silan Microelectronics
File Size 541.77 KB
Description MOSFET
Datasheet download datasheet SVF6N60F Datasheet
Additional preview pages of the SVF6N60F datasheet.

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SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 6A,600V,RDS(on(typ)=1.35Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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