SVF6N70D Datasheet | Silan Microelectronics

Silan Microelectronics SVF6N70MJG/D/K/N_Datasheet 6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 6A,700V,RDS(on(typ.)=1.35@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262-3L 123 TO-251N-3L 12 3 TO-251J-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVF6N70MJG SVF6N70DTR SVF6N70K SVF6N70MN Package TO-251J-3L TO-252-2L TO-262-3L TO-251N-3L Marking SVF6N70MJG SVF6N70D SVF6N70K 6N70MN Hazardous Substance Control Halogen free Halogen free Pb free Halogen...