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SVF6N70MJG - 700V N-CHANNEL MOSFET

Description

SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 6A,700V,RDS(on(typ. )=1.35@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262-3L 123 TO-251N-3L 12 3 TO-251J-3L 1 3 TO-252-2L.

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Datasheet Details

Part number SVF6N70MJG
Manufacturer Silan Microelectronics
File Size 370.24 KB
Description 700V N-CHANNEL MOSFET
Datasheet download datasheet SVF6N70MJG Datasheet
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Silan Microelectronics SVF6N70MJG/D/K/N_Datasheet 6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A,700V,RDS(on(typ.)=1.35@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.
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